Atomistic simulation of damage accumulation and amorphization in Ge

Atomistic simulation and the mechanism of graphene amorphization under electron irradiation.

Real-time reconstruction of a divacancy in graphene under electron irradiation (EI) is investigated by nonequilibrium molecular dynamic simulation (NEMD). The formation of the amorphous structure is found to be driven by the generalized Stone-Wales transformations (GSWTs), i.e. C-C bond rotations, around the defective area. The simulation reveals that each step of the reconstruction can be view...

Strain engineering via amorphization and recrystallization in Si/Ge heterostructures

simulation and experimental studies for prediction mineral scale formation in oil field during mixing of injection and formation water

abstract: mineral scaling in oil and gas production equipment is one of the most important problem that occurs while water injection and it has been recognized to be a major operational problem. the incompatibility between injected and formation waters may result in inorganic scale precipitation in the equipment and reservoir and then reduction of oil production rate and water injection rate. ...

accumulation of heavy metals (cu, zn, cd and pb) in sediment and selected organisms in lukut river, negrisembilan, malaysia, and toxocological studies of heavy metals (cu, zn, cd and pb) on penaeus monodon (fabricius, 1798) juveniles

چکیده ندارد.

Modelling Ge/Si quantum dots using finite element analysis and atomistic simulation

Finite Element Analysis (FEA) and atomistic simulations are used to model Ge/Si quantum dots. The three dimensional non-uniform composition profile in Ge(Si)/Si(001) quantum dots is calculated using atomistic modelling. The results are compared to experimental data from the literature. FEA is used to model the contact angle dependence of the strain energy of the QD. An equation is fitted to the...